Method for fabricating a semiconductor device with a programmable contact

ABSTRACT

The present application discloses a method for fabricating a semiconductor device includes providing a substrate, forming a gate stack on the substrate and a pair of heavily-doped regions in the substrate, forming a programmable contact having a first width on the gate stack, and forming a first contact having a second width, which is greater than the first width, on one of the pair of heavily-doped regions.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. Non-Provisionalapplication Ser. No. 16/734,869 filed Jan. 6, 2020, which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates to a method for fabricating asemiconductor device, and more particularly, to a method for fabricatinga semiconductor device with a programmable contact.

DISCUSSION OF THE BACKGROUND

Semiconductor devices are used in a variety of electronic applications,such as personal computers, cellular telephones, digital cameras, andother electronic equipment. The dimensions of semiconductor devices arecontinuously being scaled down to meet the increasing demand ofcomputing ability. However, a variety of issues arise during thescaling-down process, and such issues are continuously increasing infrequency and impact. Therefore, challenges remain in achieving improvedquality, yield, performance, and reliability and reduced complexity.

This Discussion of the Background section is provided for backgroundinformation only. The statements in this Discussion of the Backgroundare not an admission that the subject matter disclosed in this sectionconstitutes prior art to the present disclosure, and no part of thisDiscussion of the Background section may be used as an admission thatany part of this application, including this Discussion of theBackground section, constitutes prior art to the present disclosure.

SUMMARY

One aspect of the present disclosure provides a semiconductor deviceincluding a substrate, a gate stack positioned on the substrate, aplurality of programmable contacts positioned on the gate stack, a pairof heavily-doped regions positioned adjacent to two sides of the gatestack and in the substrate, and a plurality of first contacts positionedon the pair of heavily-doped regions. A width of the plurality ofprogrammable contacts is less than a width of the plurality of firstcontacts.

In some embodiments, the gate stack comprises a gate insulating layerpositioned on the substrate, a gate bottom conductive layer positionedon the gate insulating layer, and a gate top conductive layer positionedon the gate bottom conductive layer.

In some embodiments, the semiconductor device o further comprises a pairof first spacers attached to sidewalls of the gate insulating layer andsidewalls of the gate bottom conductive layer.

In some embodiments, the gate insulating layer has a thickness betweenabout 0.5 nm and about 5.0 nm, and the gate insulating layer is formedof silicon oxide, silicon nitride, silicon oxynitride, or siliconnitride oxide.

In some embodiments, the gate bottom conductive layer has a thicknessbetween about 50 nm and about 300 nm, and the gate bottom conductivelayer is formed of doped polysilicon.

In some embodiments, the gate top conductive layer has a thicknessbetween about 2 nm and about 50 nm, and the gate top conductive layer isformed of a metal silicide.

In some embodiments, the semiconductor device o further comprises a pairof lightly-doped regions positioned adjacent to the pair ofheavily-doped regions and in the substrate.

In some embodiments, a ratio of the width of the plurality ofprogrammable contacts and a width of the gate top conductive layer isbetween about 1:2 and about 1:10.

In some embodiments, the semiconductor device o further comprises a pairof second spacers attached to sidewalls of the pair of first spacers.

In some embodiments, the semiconductor device o further comprises aplurality of air gaps positioned between the plurality of programmablecontacts.

In some embodiments, the gate insulating layer comprises a centerportion and two end portions, wherein the two end portions have agreater concentration of oxygen than the center portion.

Another aspect of the present disclosure provides a semiconductor deviceincluding a substrate, a gate stack positioned on the substrate, aplurality of programmable contacts positioned on the gate stack, a pairof stress regions positioned adjacent to two sides of the gate stack andin the substrate, and a plurality of first contacts positioned on thepair of stress regions. A width of the plurality of programmablecontacts is less than a width of the plurality of first contacts.

Another aspect of the present disclosure provides a method forfabricating a semiconductor device including providing a substrate,forming a gate stack on the substrate and a pair of heavily-dopedregions in the substrate, forming a programmable contact having a firstwidth on the gate stack, and forming a first contact having a secondwidth, which is greater than the first width, on one of the pair ofheavily-doped regions.

In some embodiments, forming the gate stack on the substrate comprises:forming a gate insulating layer on the substrate; forming a gate bottomconductive layer on the gate insulating layer; and forming a gate topconductive layer on the gate bottom conductive layer.

In some embodiments, forming the programmable contact having the firstwidth on the gate stack comprises: forming catalyst units on the gatetop conductive layer; and growing the catalyst units into theprogrammable contact.

In some embodiments, forming the gate top conductive layer on the gatebottom conductive layer comprises: forming a gate top conductive filmover the substrate and the gate bottom conductive layer; performing anannealing process to form the gate top conductive layer; and performinga removal process.

In some embodiments, growing the catalyst units into the programmablecontact is assisted by a deposition process using silane or silicontetrachloride as a precursor.

In some embodiments, a temperature of the annealing process is betweenabout 400° C. and about 500° C.

In some embodiments, a temperature of the deposition is between about370° C. and about 500° C.

In some embodiments, a reagent of the removal process consists ofhydrogen peroxide and sulfuric acid in a ratio of 10:1.

Due to the design of the semiconductor device of the present disclosure,the programmable contact may provide an option to change a status of acircuit including the programmable contact and an electricalcharacteristic of the semiconductor device may be changed accordingly.Through tuning the electrical characteristic of the semiconductordevice, the quality of the semiconductor device may be improved. Inaddition, due to the pair of stress regions, the carrier mobility of thesemiconductor device may be increased. Furthermore, due to the air gaps,a parasitic capacitance of the semiconductor device may be reduced.

The foregoing has outlined rather broadly the features and technicaladvantages of the present disclosure in order that the detaileddescription of the disclosure that follows may be better understood.Additional features and advantages of the disclosure will be describedhereinafter, and form the subject of the claims of the disclosure. Itshould be appreciated by those skilled in the art that the conceptionand specific embodiment disclosed may be readily utilized as a basis formodifying or designing other structures or processes for carrying outthe same purposes of the present disclosure. It should also be realizedby those skilled in the art that such equivalent constructions do notdepart from the spirit and scope of the disclosure as set forth in theappended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates, in a schematic top-view diagram, a semiconductordevice in accordance with one embodiment of the present disclosure;

FIG. 2 is a schematic cross-sectional view diagram taken along a lineA-A′ in FIG. 1;

FIGS. 3 to 6 are schematic cross-sectional view diagrams taken along theline A-A′ in FIG. 1 for semiconductor devices in accordance with otherembodiments of the present disclosure;

FIGS. 7 to 9 illustrate, in schematic top-view diagrams, semiconductordevices in accordance with other embodiments of the present disclosure;

FIG. 10 illustrates, in a flowchart diagram form, a method forfabricating a semiconductor device in accordance with one embodiment ofthe present disclosure;

FIGS. 11 to 17 illustrate, in schematic cross-sectional view diagrams, aflow for fabricating the semiconductor device in accordance with oneembodiment of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

It should be understood that when an element or layer is referred to asbeing “connected to” or “coupled to” another element or layer, it can bedirectly connected to or coupled to another element or layer, orintervening elements or layers may be present.

It should be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. Unless indicated otherwise, these terms areonly used to distinguish one element from another element. Thus, forexample, a first element, a first component or a first section discussedbelow could be termed a second element, a second component or a secondsection without departing from the teachings of the present disclosure.

Unless the context indicates otherwise, terms such as “same,” “equal,”“planar,” or “coplanar,” as used herein when referring to orientation,layout, location, shapes, sizes, amounts, or other measures, do notnecessarily mean an exactly identical orientation, layout, location,shape, size, amount, or other measure, but are intended to encompassnearly identical orientation, layout, location, shapes, sizes, amounts,or other measures within acceptable variations that may occur, forexample, due to manufacturing processes. The term “substantially” may beused herein to reflect this meaning. For example, items described as“substantially the same,” “substantially equal,” or “substantiallyplanar,” may be exactly the same, equal, or planar, or may be the same,equal, or planar within acceptable variations that may occur, forexample, due to manufacturing processes.

In the present disclosure, a semiconductor device generally means adevice which can function by utilizing semiconductor characteristics,and an electro-optic device, a light-emitting display device, a memorydevice, a semiconductor circuit, and an electronic device are allincluded in the category of the semiconductor device.

It should be noted that, in the description of the present disclosure,above (or up) corresponds to the direction of the arrow of the directionZ, and below (or down) corresponds to the opposite direction of thearrow of the direction Z.

FIG. 1 illustrates, in a schematic top-view diagram, a semiconductordevice 100A in accordance with one embodiment of the present disclosure.FIG. 2 is a schematic cross-sectional view diagram taken along a lineA-A′ in FIG. 1. Some elements of the semiconductor device 100A of thepresent disclosure are not shown in FIG. 1 for clarity.

With reference to FIGS. 1 and 2, in the embodiment depicted, thesemiconductor device 100A may include a substrate 101, an isolationstructure 103, a gate stack 201, a pair of first spacers 301, a pair oflightly-doped regions 305, a pair of heavily-doped regions 307, aplurality of programmable contacts 401, a plurality of first contacts501, a first conductive layer 601, a plurality of second conductivelayers 603, a first insulating layer 701, and a second insulating layer703.

With reference to FIGS. 1 and 2, in the embodiment depicted, thesubstrate 101 may be formed of for example, silicon, germanium, silicongermanium, silicon carbon, silicon germanium carbon, gallium, galliumarsenic, indium arsenic, indium phosphorus or other IV-IV, III-V orII-VI semiconductor materials. The substrate 101 may have a firstlattice constant and a crystal orientation <111>.

With reference to FIGS. 1 and 2, in the embodiment depicted, theisolation structure 103 may be disposed in the substrate 101 and definesan active area 105 of the substrate 101. (Two isolation structures 103are shown in FIG. 2, but other quantities of isolation structures may beused in other embodiments.) The isolation structure 103 may be formed ofan insulating material such as silicon oxide, silicon nitride, siliconoxynitride, silicon nitride oxide, or fluoride-doped silicate.

With reference to FIGS. 1 and 2, in the embodiment depicted, the firstinsulating layer 701 and the second insulating layer 703 may besequentially disposed on the substrate 101. The first insulating layer701 and the second insulating layer 703 may be formed of, for example,silicon nitride, silicon oxide, silicon oxynitride, flowable oxide,undoped silica glass, borosilica glass, phosphosilica glass,borophosphosilica glass, or a combination thereof, but are not limitedthereto. The first insulating layer 701 and the second insulating layer703 may be formed of a same material, but are not limited thereto.

With reference to FIGS. 1 and 2, in the embodiment depicted, the gatestack 201 may be disposed on the substrate 101 and in the firstinsulating layer 701. The gate stack 201 may intersect the active area105 from a top-view perspective. The gate stack 201 may include a gateinsulating layer 203, a gate bottom conductive layer 205, and a gate topconductive layer 207. The gate insulating layer 203 may be disposed onthe substrate 101 and may intersect the active area 105 from a top-viewperspective. The gate insulating layer 203 may have a thickness betweenabout 0.5 nm and about 5.0 nm. Preferably, the thickness of the gateinsulating film 203 may be between about 0.5 nm and about 2.5 nm. Thegate insulating layer 203 may be formed of, for example, an insulatingmaterial such as silicon oxide, silicon nitride, silicon oxynitride, orsilicon nitride oxide.

Alternatively, in another embodiment, the insulating material may have adielectric constant of about 4.0 or greater. Examples for the insulatingmaterial may include, but are not limited to, hafnium oxide, hafniumzirconium oxide, hafnium lanthanum oxide, hafnium silicon oxide, hafniumtantalum oxide, hafnium titanium oxide, zirconium oxide, aluminum oxide,aluminum silicon oxide, titanium oxide, tantalum pentoxide, lanthanumoxide, lanthanum silicon oxide, strontium titanate, lanthanum aluminate,yttrium oxide, gallium (III) trioxide, gadolinium gallium oxide, leadzirconium titanate, barium titanate, barium strontium titanate, bariumzirconate, or a mixture thereof.

With reference to FIGS. 1 and 2, in the embodiment depicted, the gatebottom conductive layer 205 may be disposed on the gate insulating layer203 and in the first insulating layer 701. The gate bottom conductivelayer 205 may have a thickness between about 50 nm and about 300 nm. Thegate bottom conductive layer 205 may be formed of, for example, dopedpolysilicon. The gate top conductive layer 207 may be disposed on thegate bottom conductive layer 205. The gate top conductive layer 207 mayhave a thickness between about 2 nm and about 50 nm. The gate topconductive layer 207 may be formed of, for example, a metal silicide.The metal silicide may be nickel silicide, platinum silicide, titaniumsilicide, molybdenum silicide, cobalt silicide, tantalum silicide,tungsten silicide, or the like.

With reference to FIGS. 1 and 2, in the embodiment depicted, the pair offirst spacers 301 may be attached to sidewalls of the gate insulatinglayer 203 and sidewalls of the gate bottom conductive layer 205. Thepair of first spacers 301 may be disposed in the first insulating layer701. The pair of first spacers 301 may be formed of, for example,silicon oxide, silicon nitride, silicon oxynitride, silicon nitrideoxide, or polysilicon.

With reference to FIGS. 1 and 2, in the embodiment depicted, the pair oflightly-doped regions 305 may be disposed adjacent to two sides of thegate stack 201 and in the active area 105 of the substrate 101.Specifically, the pair of lightly-doped regions 305 may be disposedadjacent to the sidewalls of the gate insulating layer 203 and in theactive area 105. Portions of the pair of lightly-doped regions 305 maybe respectively correspondingly disposed below the pair of first spacers301. The pair of lightly-doped regions 305 may be doped with a dopantsuch as phosphorus, arsenic, antimony, boron, or indium.

With reference to FIGS. 1 and 2, in the embodiment depicted, the pair ofheavily-doped regions 307 may be disposed adjacent to the two sides ofthe gate stack 201 and in the active area 105 of the substrate 101. Thepair of heavily-doped regions 307 may be respectively correspondinglydisposed adjacent to the pair of lightly-doped regions 305. The pair ofheavily-doped regions 307 may be doped with a same dopant as the pair oflightly-doped regions 305. The pair of heavily-doped regions 307 mayhave a dopant concentration greater than that of the pair oflightly-doped regions 305.

With reference to FIGS. 1 and 2, in the embodiment depicted, theplurality of programmable contacts 401 may be disposed on the gate stack201 and extend in the direction Z. The plurality of programmablecontacts 401 may be disposed in the first insulating layer 701.Specifically, the plurality of programmable contacts 401 may be disposedon the gate top conductive layer 207. Any one of the plurality ofprogrammable contacts 401 may have a width W1. A ratio of the width W1of the programmable contact 401 and a width W2 of the gate topconductive layer 207 is between about 1:2 and about 1:10. It should benoted that the number of the plurality of programmable contacts 401shown in the figures is for illustration only, and other numbers of theprogrammable contacts 401 may be employed. Top surfaces of the pluralityof programmable contacts 401 may be even with a top surface of the firstinsulating layer 701. The plurality of programmable contacts 401 may beformed of, for example, silicon or doped silicon. In some embodiments,the plurality of programmable contacts 401 may have a crystalorientation <111>.

With reference to FIGS. 1 and 2, in the embodiment depicted, theplurality of first contacts 501 may be disposed in the first insulatinglayer 701 and respectively correspondingly on the pair of heavily-dopedregions 307. Any one of the plurality of first contacts 501 may have awidth W3. The width W3 of the first contact 501 may be greater than thewidth W1 of the programmable contact 401. The narrower width W1 of theprogrammable contact 401 may result in a resistivity greater than thatof the first contact 501. In the embodiment depicted, as shown in atop-view perspective in FIG. 1, the plurality of programmable contacts401 and the plurality of first contacts 501 may be disposed at about thesame position along the direction Y as the line A-A′. The plurality offirst contacts 501 may be formed of, for example, a conductive materialsuch as doped polysilicon, metal, metal nitride, or metal silicide. Themetal may be aluminum, copper, tungsten, or cobalt.

With reference to FIGS. 1 and 2, in the embodiment depicted, the firstconductive layer 601 and the plurality of second conductive layers 603may be respectively disposed in the second insulating layer 703. Thefirst conductive layer 601 may be disposed on the plurality ofprogrammable contacts 401. It should be noted that all of the pluralityof programmable contacts 401 may be electrically connected to the firstconductive layer 601. The plurality of second conductive layers 603 maybe respectively correspondingly disposed on the plurality of firstcontacts 501.

FIGS. 3 to 6 are schematic cross-sectional view diagrams taken along theline A-A′ in FIG. 1 for semiconductor devices 100B, 100C, 100D, and 100Ein accordance with other embodiments of the present disclosure. FIGS. 7to 9 illustrate, in schematic top-view diagrams, semiconductor devices100F, 100G, and 100H in accordance with other embodiments of the presentdisclosure.

With reference to FIG. 3, the semiconductor device 100B may include apair of second spacers 303. The pair of second spacers 303 may beattached to sidewalls of the pair of first spacers 301. The pair ofsecond spacers 303 may be opposite to the gate stack 201 with the pairof first spacers 301 interposed therebetween. The pair of second spacers303 may be formed of, for example, silicon oxide. Due to the pair ofsecond spacers 303, a thickness of the pair of first spacers 301 may beminimized, thereby reducing overlap capacitance formed between the pairof heavily-doped regions 307 and the gate stack 201.

With reference to FIG. 4, the semiconductor device 100C may include aplurality of air gaps 801. The plurality of air gaps 801 may be disposedbetween adjacent pairs of the plurality of programmable contacts 401.The plurality of air gaps 801 may be formed in narrow spaces between theadjacent pairs of the plurality of programmable contacts 401. A ratiobetween a width W4 of the narrow space between the adjacent pairs of theplurality of programmable contacts 401 and the width W2 of the gate topconductive layer 207 may be between about 1:10 and about 1:15. Theplurality of air gaps 801 may significantly alleviate an interferenceeffect originating from a parasitic capacitance between the adjacentpairs of the plurality of programmable contacts 401.

With reference to FIG. 5, the gate insulating layer 203D of thesemiconductor device 100D may include a center portion 203D-1 and twoend portions 203D-2 respectively connected to two ends of the centerportion 203D-1. The two end portions 203D-2 may have a greaterconcentration of oxygen than the center portion 203D-1. The greaterconcentration of oxygen at the two end portions 203D-2 of the gateinsulating layer 203D may increase a dielectric constant of the gateinsulating layer 203D. As a result, the leakage current of thesemiconductor device 100D may be reduced. The greater concentration ofoxygen of the two end portions 203D-2 may be formed by a lateraloxidation process in an oxidizing environment including oxidizingspecies. A process temperature of the lateral oxidation process may bebetween about 300° C. and about 600° C. A partial pressure of oxygen ofthe lateral oxidation process may be between about 100 mTorr and about20 atm. A duration of the lateral oxidation process may between about 10minutes and about 6 hours. The oxidizing species may be moleculesincluding oxygen such as molecular oxygen, water vapor, nitric oxide, ornitrous oxide.

With reference to FIG. 6, the semiconductor device 100E may include apair of stress regions 309. The pair of stress regions 309 may bedisposed adjacent to the two sides of the gate stack 201 and in theactive area 105 of the substrate 101. The pair of stress regions 309 maybe respectively correspondingly disposed adjacent to the pair oflightly-doped regions 305. The pair of stress regions 309 may have asecond lattice constant which is different from the first latticeconstant of the substrate 101. The pair of stress regions 309 may beformed of, for example, silicon germanium or silicon carbide. The secondlattice constant of the pair of stress regions 309 is different from thefirst lattice constant of the substrate 101; therefore, the carriermobility of the semiconductor device 100E may be increased, and theperformance of the semiconductor device 100E may be improved.

With reference to FIG. 7, in the semiconductor device 100F, as shown ina top-view perspective, the plurality of programmable contacts 401F maybe disposed along a line A-A′ along the direction Y. With reference toFIG. 8, in the semiconductor device 100G and as shown in a top-viewperspective, the plurality of programmable contacts 401G and theplurality of first contacts 501 may be disposed at different positionsalong the direction Y. With reference to FIG. 9, in the semiconductordevice 100H, as shown in a top-view perspective, the plurality ofprogrammable contacts 401H may be disposed at different positions alongthe direction X and the direction Y.

FIG. 10 illustrates, in a flowchart diagram form, a method 30 forfabricating a semiconductor device 100A in accordance with oneembodiment of the present disclosure. FIGS. 11 to 17 illustrate, inschematic cross-sectional view diagrams, a flow for fabricating thesemiconductor device 100A in accordance with one embodiment of thepresent disclosure.

It should be noted that the terms “forming,” “formed” and “form” maymean and include any method of creating, building, patterning,implanting, or depositing an element, a dopant or a material. Examplesof forming methods may include, but are not limited to, atomic layerdeposition, chemical vapor deposition, physical vapor deposition,sputtering, co-sputtering, spin coating, diffusing, depositing, growing,implantation, photolithography, dry etching, and wet etching.

With reference to FIGS. 10 and 11, at step S1, in the embodimentdepicted, a substrate 101 may be provided, an isolation structure 103and a pair of lightly-doped regions 305 may be formed in the substrate101, and a gate insulating layer 203 and a gate bottom conductive layer205 may be formed on the substrate 101. The isolation structure 103 maydefine an active area 105. The gate insulating layer 203 may be formedon the substrate 101. The gate bottom conductive layer 205 may be formedon the gate insulating layer 203. The pair of lightly-doped regions 305may be formed adjacent to two sides of the gate insulating layer 203 andin the substrate 101.

With reference to FIGS. 10 and 12, at step S13, in the embodimentdepicted, a pair of first spacers 301 may be formed on the substrate 101and a pair of heavily-doped regions 307 may be formed in the substrate101. A first spacer film may be formed over the substrate 101 and thegate bottom conductive layer 205. An etch process, such as ananisotropic dry etch process, may be performed to remove portions of thefirst spacer film and concurrently form the pair of first spacers 301attached to sidewalls of the gate bottom conductive layer 205 and thegate insulating layer 203.

With reference to FIGS. 10 and 13, at step S15, in the embodimentdepicted, a gate top conductive layer 207 may be formed on the gatebottom conductive layer 205. A gate top conductive film may be depositedover the substrate 101, the gate bottom conductive layer 205, and thepair of first spacers 301. The gate top conductive film may be formedof, for example, nickel, platinum, titanium, molybdenum, cobalt,tantalum, or tungsten. An annealing process may be performed to reactthe gate top conductive film with the gate bottom conductive layer 205and form the gate top conductive layer 207 formed of metal silicide suchas nickel silicide, platinum silicide, titanium silicide, molybdenumsilicide, cobalt silicide, tantalum silicide, or tungsten silicide. Theannealing process may be one step or two steps. When the two-stepannealing process is performed, a temperature of the first step may belower than a temperature of the second step. After the annealingprocess, a removal process may be performed to remove unreacted portionsof the gate top conductive film. The gate insulating layer 203, the gatebottom conductive layer 205, and the gate top conductive layer 207together form a gate stack 201.

When the gate top conductive film is formed of nickel, the gate topconductive layer 207 may be formed of nickel silicide. Nickel silicidemay be NiSi or NiSi₂. When the NiSi is employed, a temperature of theannealing process may be between about 400° C. about 500° C. When theNiSi₂ is employed, a temperature of the annealing process may be above750° C. The removal process may be performed with a removal regentconsisting of hydrogen peroxide and sulfuric acid in a ratio of 10:1. Aprocess temperature of the removal process may be about 55° C. to 75° C.A process duration of the removal process may be between about 8 minutesand about 15 minutes.

With reference to FIGS. 10 and 14 to 16, at step S17, in the embodimentdepicted, a plurality of programmable contacts 401 may be formed on thegate top conductive layer 207. With reference to FIG. 14, a plurality ofcatalyst units 403 may be formed on the gate top conductive layer 207.The plurality of catalyst units 403 may be formed of, for example,aluminum, gold, titanium, nickel, or gallium. The plurality of catalystunits 403 may be formed by patterning a catalyst film into dots (i.e.,the plurality of catalyst units 403) or by dispensing a colloidcontaining aluminum, gold, titanium, nickel, or gallium. Other methodsare also possible. For example, a thin catalyst film may agglomerateinto separated catalyst units 403 if annealed at a temperature above350° C.

With reference to FIG. 15, the plurality of catalyst units 403 may growperpendicular to the top surface of the gate top conductive layer 207and form the plurality of programmable contacts 401 with assistance of adeposition process such as chemical vapor deposition or aplasma-enhanced chemical vapor deposition. During the depositionprocess, a dopant such as phosphorus, arsenic, antimony, boron, orindium may be used for in-situ doping of the plurality of programmablecontacts 401. A precursor of the deposition process may be silane orsilicon tetrachloride. When silane is employed as the precursor, atemperature of the deposition process may be between about 370° C. andabout 500° C. When silicon tetrachloride is employed as the precursor, atemperature of the deposition process may be between about 800° C. andabout 950° C.

The growth of the plurality of programmable contacts 401 may bedescribed as a vapor-liquid-solid mechanism. In the beginning of thegrowth process, catalyst-silicon liquid alloy droplets 405 are formed.With an additional supply of silicon from the gas phase, thecatalyst-silicon liquid alloy droplets 405 become supersaturated withsilicon and the excess silicon is deposited at the solid-liquidinterface. As a result, the catalyst-silicon liquid alloy droplets 405are raised from the top surface of the gate top conductive layer 207 tothe tops of the plurality of programmable contacts 401.

With reference to FIG. 15, a first insulating layer 701 may be depositedafter the forming of the plurality of programmable contacts 401. Withreference to FIG. 16, a planarization process, such as chemicalmechanical polishing, may be performed to provide a substantially flatsurface for subsequent processing steps. Top surfaces of the pluralityof programmable contacts 401 may be even with a top surface of the firstinsulating layer 701.

With reference to FIGS. 1, 2, 10, and 17, at step S19, in the embodimentdepicted, a plurality of first contacts 501 may be formed on thesubstrate 101, and a first conductive layer 601 and a plurality ofsecond conductive layers 603 may be formed above the substrate 101. Withreference to FIG. 17, the plurality of first contacts 501 may be formedon the pair of heavily-doped regions 307 and in the first insulatinglayer 701 by a damascene process. With reference back to FIGS. 1 and 2,a second insulating layer 703 may be formed on the first insulatinglayer 701. The first conductive layer 601 may be formed on the pluralityof programmable contacts 401 and the plurality of second conductivelayers 603 may be respectively correspondingly formed on the pluralityof first contacts 501 by another damascene process.

Due to the design of the semiconductor device of the present disclosure,the plurality of programmable contacts 401 may have a resistivitygreater than that of the plurality of first contacts 501. Hence, when agreater voltage such as a programmable voltage is applied, the pluralityof programmable contacts 401 may be blown and a circuit including theplurality of programmable contacts 401 may be opened. That is, theplurality of programmable contacts 401 may provide an option to change astatus of the circuit including the plurality of programmable contacts401, and an electrical characteristic of the semiconductor device 100Amay be accordingly changed. Through tuning the electrical characteristicof the semiconductor device 100A, the quality of the semiconductordevice 100A may be improved.

One aspect of the present disclosure provides a semiconductor deviceincluding a substrate, a gate stack positioned on the substrate, aplurality of programmable contacts positioned on the gate stack, a pairof heavily-doped regions positioned adjacent to two sides of the gatestack and in the substrate, and a plurality of first contacts positionedon the pair of heavily-doped regions. A width of the plurality ofprogrammable contacts is less than a width of the plurality of firstcontacts.

Another aspect of the present disclosure provides a semiconductor deviceincluding a substrate, a gate stack positioned on the substrate, aplurality of programmable contacts positioned on the gate stack, a pairof stress regions positioned adjacent to two sides of the gate stack andin the substrate, and a plurality of first contacts positioned on thepair of stress regions. A width of the plurality of programmablecontacts is less than a width of the plurality of first contacts.

Another aspect of the present disclosure provides a method forfabricating a semiconductor device including providing a substrate,forming a gate stack on the substrate and a pair of heavily-dopedregions in the substrate, forming a programmable contact having a firstwidth on the gate stack, and forming a first contact having a secondwidth, which is greater than the first width, on one of the pair ofheavily-doped regions.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutionsand alterations can be made herein without departing from the spirit andscope of the disclosure as defined by the appended claims. For example,many of the processes discussed above can be implemented in differentmethodologies and replaced by other processes, or a combination thereof.

Moreover, the scope of the present application is not intended to belimited to the particular embodiments of the process, machine,manufacture, composition of matter, means, methods and steps describedin the specification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present disclosure, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein, may be utilized according tothe present disclosure. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, and steps.

What is claimed is:
 1. A method for fabricating a semiconductor device,comprising: providing a substrate; forming a gate stack on the substrateand a pair of heavily-doped regions in the substrate; forming aprogrammable contact having a first width on the gate stack; forming afirst contact having a second width, which is greater than the firstwidth, on one of the pair of heavily-doped regions.
 2. The method forfabricating the semiconductor device of claim 1, wherein forming thegate stack on the substrate comprises: forming a gate insulating layeron the substrate; forming a gate bottom conductive layer on the gateinsulating layer; and forming a gate top conductive layer on the gatebottom conductive layer.
 3. The method for fabricating the semiconductordevice of claim 2, wherein forming the programmable contact having thefirst width on the gate stack comprises: forming catalyst units on thegate top conductive layer; and growing the catalyst units into theprogrammable contact.
 4. The method for fabricating the semiconductordevice of claim 3, wherein forming the gate top conductive layer on thegate bottom conductive layer comprises: forming a gate top conductivefilm over the substrate and the gate bottom conductive layer; performingan annealing process to form the gate top conductive layer; andperforming a removal process.
 5. The method for fabricating thesemiconductor device of claim 4, wherein growing the catalyst units intothe programmable contact is assisted by a deposition process usingsilane or silicon tetrachloride as a precursor.
 6. The method forfabricating the semiconductor device of claim 5, wherein a temperatureof the annealing process is between about 400° C. and about 500° C. 7.The method for fabricating the semiconductor device of claim 6, whereina temperature of the deposition is between about 370° C. and about 500°C.
 8. The method for fabricating the semiconductor device of claim 7,wherein a reagent of the removal process consists of hydrogen peroxideand sulfuric acid in a ratio of 10:1.